回收存储器

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内存芯片,MCP Memory,N/A,32 Gb,48 pin TSOP,20×12×1.2 mm,0.5 mm,3.3 V,NAND,H27UBG8T2BTR-BC,HYNIX
内存芯片,Memory,Spi Flash,128Mbit,WSON8 6*5-mm,6.00×5.00×0.75 mm,1.27 mm,1.8 V,N/A,W25Q128FWPIM,WINBOND
内存芯片,Memory,64M bit serial flash,,N/A,MLP8,6×5 mm,1 mm,1.8 V,N/A,N25W064A11EF640F,MICRON
内存芯片,MCP Memory,e.MMC+LPDDR2 S4 SDRAM,4 GB e.MMC+4 Gb(256 Mb x 16),FBGA162 ball,11.5×13×1.0 mm,0.5 mm,N/A,N/A,KMNJS000FM-B205,SAMSUNG
内存芯片,MCP Memory,DDR2 Mobile RAM,8Gb DDR2 Mobile RAM,216-ball FBGA,12×12×0.8mm,0.40 mm,1.2 V,POP,EDB8164B3PF-1D-F,ELPIDA
内存芯片,MCP Memory,LPDDR2-S4 SDRAM+LPDDR2-S4,4Gb+ 4Gb,216-ball FBGA,12×12×0.8mm,0.40 mm,1.2 V,PoP,K3PE7E700M-XGC1,SAMSUNG
内存芯片,MCP Memory,NAND Flash+Mobile DDR SDRAM,2Gb (128M x16)+1Gb (64M x16),153-ball FBGA,8×9×1.0mm,0.50 mm,1.8 V,N/A,K522H1HACF-B050,SAMSUNG
内存芯片,MCP Memory,eMMC,4GB Emmc,153-ball FBGA,11.5×13×1.0mm,0.80 mm,1.8 V,MLC,KLM4G1FE3B-B001,SAMSUNG
内存芯片,MCP Memory,eMMC,8GB Emmc,153-ball TFBGA,11.5×13×1.0mm,0.50 mm,1.8 V,N/A,KLM8G2FE3B-B001,SAMSUNG
内存芯片,MCP Memory,NAND Flash+mobile DDR,2Gb+1Gb,P-TFBGA130-0809-0.65AZ,8.0×9.0×1.0mm,0.650 mm,1.8 V,N/A,TYAB0A111254KA20,TOSHIBA
内存芯片,MCP Memory,NOR Flash+UtRAM2,128Mb +64Mb UtRAM2,84-ball FBGA,8×11.6×1.2mm,0.80 mm,1.8 V,N/A,K5L2866ATC-BQ12,SAMSUNG
内存芯片,MCP Memory,Flash+ PSRAM,32Mb(2M×16)+8Mb (512K×16),56-ball BGA,7×9×1.2mm,0.80 mm,1.8 V,N/A,FM91L03208UA-77BGE2B,ESMT
内存芯片,MCP Memory,Flash+ PSRAM,32Mb(2M×16)+8Mb (512K×16),56-ball BGA,7×9×1.2mm,0.80 mm,1.8 V,N/A,FM91L03208UA-77BGE2B,ESMT
无线收发芯片,Transceiver,LFCSP-40,6×6×0.85mm,0.50 mm,N/A,AD6546,ANALOG DEVICES
基带芯片,Baseband Chipset,745PNSP,745 Balls,12×12×0.78mm,0.4 mm,N/A,W/O HDCP，1.4GHz,MSM-8230-2-745PNSP-TR-02-0-AA,QUALCOMM
基带芯片,Baseband Chipset,745PNSP,745 Balls,12×12×0.78mm,0.4 mm,N/A,W/O HDCP,MSM-8230-2-745PNSP-TR-02-0,QUALCOMM
基带芯片,集成电路,Multimedia Device,S-PBGA-N547,547 Balls,12.00×12.00×0.90 mm,0.4 mm,Security,HS with TI dummy keys,X4460B5MCBS,TI
基带处理芯片,Multimedia Baseband Processor,344-pin discrete package,N/A,11×11x1.0 mm,0.50 mm,Non-Security,N/A,21654GB1IFFBG,BROADCOM
集成电路,HEDGE Baseband Processor,FBGA,415.0 Balls,11×11 mm,N/A,Security,N/A,BCM2157B0KFB01G,BROADCOM
基带处理芯片,Baseband Processor,PG-VF2BGA-221-1,626.0 Balls,7.5×7.5×1.0 mm,0.40 mm,Non-Security,N/A,PMB9811.BV1.0,INFINEON
基带处理芯片,Baseband Processor,TFBGA,564.0 Balls,15×15×1.2 mm,0.3780 mm,Security,N/A,MT6516SA,MTK
基带处理芯片,Baseband Processor,415-pin FBGA,N/A,11×11×1.2 mm,0.40 mm,Non-Security,N/A,BCM2157B0KFBG,BROADCOM
FM芯片,FM radio tuner,FM 65 to 108 MHz,24 pin QFN,4×4×0.9 mm ,0.50 mm,Non-Security,N/A,RDA5802E(F),RDA
射频功率放大器,RF PA,UMTS Band1,10pin,3×3×1.0(typ)mm,N/A,ACPM-5201-TR1,AVAGO
内存芯片,MCP Memory,NAND flash+ LPSDRAM,1Gb + 512Mb  LPSDRAM,107-ball TFBGA,10.5×13×1.2mm,0.80 mm,2.6 V,N/A,NANDA9W3N6CZBB5E,NUMONYX
蓝牙/FM芯片,BT with FM Receiver,BT 2.1 with FM Receiver,64-PIN WLBGA,3.374×3.344×0.55 mm,0.40 mm,Non-Security,N/A,BCM20780B0KUBG,BROADCOM
模拟开关,SPDT Switch,1.5×1.5×0.4mm,12pin,N/A,XM0860ST-DL1201,MURATA
发射器,Transmit Module,Dual Band GSM850/PCS1900,23pin,6.63×5.24×1.0 mm,N/A,RF7167,RFMD
发射器,Transmit Module,Dual band GSM900/DCS1800,23pin,6.63×5.24×1.0 mm,N/A,RF7166,RFMD
发射器,Transmit Module,EGSM900/DCS1800/PCS1900,23pin,6.63×5.24×1.0 mm,N/A,RF7163,RFMD
无线收发芯片,EDGE RF single chip,LFCSP-40,6×6×0.85mm,0.50 mm,N/A,AD6546BCPZ,ANALOG DEVICES
PA模组,Module with Power Amplifier and Integrated Duplexer,WCDMA Mini PAiD 850,,DGD019M01, (B30312-D2017-Q121),EPCOS,
前端集成模块,SAW Front End Module,GSM/WCDMA SAW Front End Module,24pin,4.5×3.2mm,N/A,B30674-D5017-Q824,EPCOS
前端集成模块,Front End Module,GSM900/1800 dual band,20pin,5.5×5.5×1.2mm,N/A,RPF88130B,RENESAS
无线收发芯片,GSM/GPRS/EDGE RF transceiver,QFN40,6×6×0.85mm,0.50 mm,N/A,MT6140AN/DRC-L,MTK
模拟开关,DPDT AN/Alog Switch,1.8×1.4mm,WQFN-10,N/A,SGM7222YWQ10/TR,SGMICRO
蓝牙/BB处理芯片,BT trans and BB processor,Transceiver and Baseband,50pin,4.5×4×0.8mm,0.50 mm,Non-Security,N/A,BCM2070CB0KUFBG,BROADCOM
基带芯片,Baseband Chipset,424 CSP,N/A,12×12×1.05 mm,0.5 mm,Security,N/A,QSC-6055-0-424CSP-TR-08-0,QUALCOMM
电源管理芯片,Power Management Unit,97  CSP,6.0×6.0×1.2mm,0.50 mm,N/A,PM-6658-0-97CSP-TR-03,QUALCOMM